EBIC Imaging of Conductive Paths Formed in Graphene Oxide as a Result of Resistive Switching

The electron-beam-induced current (EBIC) method is utilized in this work to visualize conductive channels formed graphene oxide as a result of resistive switching. Using metal–insulator–semiconductor (MIS) structures, an increase the electron beam induced by few orders magnitude compared with EBIC signal metal–insulator–metal (MIM) structures achieved. mechanism image formation related explained separation and collection e-beam generated excess carriers rectifying barrier nanocontacts at oxide/Si interface during It shown that efficiency decreases energy, agreement theoretical predictions for Schottky-like nanocontacts. An important advantage demonstrated its ability monitor generation elimination high density even when current–voltage measurements cannot detect separate these processes. study dynamics channel can help better understand underlying physical mechanisms their generation.